Today’s computers rely on dissipative logic gates that are based on transistors. Increasing computational power means increasing the integration density and power dissipation. Among other alternatives, utilization of magnetism is a promising approach. Based on recent developments for improving the technology for magnetic random access memory (MRAM), a concept is proposed of how to utilize forthcoming generations of MRAM chips in the spin flop switching mode as versatile reconfigurable magnetologic gate arrays. A single MRAM cell can be directly operated as either NOT, AND, or NAND gates, and the use of bipolar current makes XOR and XNOR feasible as well. The actual functionality can be pre-programmed at run-time and the output is nonvolatile. Based on the spin flop switching mode, this concept is directly applicable to second-generation MRAMs.

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