Blue-violet $InGaN$ laser diodes grown on bulk $GaN$ substrates by plasma-assisted molecular-beam epitaxy Available to Purchase

We report on the $InGaN$ multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at $408nm$ is demonstrated at room temperature with pulsed current injections using $50ns$ pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are $12kA∕cm2$ $(900mA)$ and $9V$⁠, respectively. High output power of $0.83W$ is obtained during pulse operation at $3.6A$ and $9.6V$ bias with the slope efficiency of $0.35W∕A$⁠. The laser structures are deposited on the high-pressure-grown low dislocation bulk $GaN$ substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE.