We demonstrate the design and implementation of a broad-gain and low-threshold (Jth=860Acm2 at 8K) quantum-cascade laser emitting between 3.7 and 4.2μm. The active region design is based on strain-compensated In0.73Ga0.27AsAlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330K with maximum single-facet output peak powers of 6W at 8K and 240mW at 296K. The temperature coefficient T0 is 119K.

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