The wider-gap members of a semiconductor series such as diamondSiGe or AlNGaNInN often cannot be doped n-type at equilibrium. We study theoretically if this is the case in the chalcopyrite family CuGaSe2CuInSe2, finding that: (i) Bulk CuInSe2 (CIS, Eg=1.04eV) can be doped at equilibrium n-type either by Cd or Cl, but bulk CuGaSe2 (CGS, Eg=1.68eV) cannot; (ii) result (i) is primarily because the Cu-vacancy pins the Fermi level in CGS farther below the conduction band minimum than it does in CIS, as explained by the “doping limit rule;” (iii) Cd doping is better than Cl doping, in that CdCu yields in CIS a higher net donor concentration than ClSe; and (iv) in general, the system shows massive compensation of acceptors (CdIII,VCu) and donors (ClSe,CdCu,InCu).

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In case of Cd-doping of CIS, using a Cd chemical potential corresponding to equilibrium with CdSe results in undesirably high Cd incorporation. Therefore, we used here a slightly lower ΔμCd (by 0.2 eV).

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