Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries.
Parallel writing on zirconium nitride thin films by local oxidation nanolithography
N. Farkas, J. R. Comer, G. Zhang, E. A. Evans, R. D. Ramsier, S. Wight, J. A. Dagata; Parallel writing on zirconium nitride thin films by local oxidation nanolithography. Appl. Phys. Lett. 6 December 2004; 85 (23): 5691–5693. https://doi.org/10.1063/1.1833569
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