Data are presented demonstrating the laser operation (quasicontinuous, 200K) of an InGaP–GaAs–InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain β=ΔIcΔIb in common emitter operation decreases sharply at laser threshold (6.52.5,β>1).

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