Data are presented demonstrating the laser operation (quasicontinuous, ) of an InGaP–GaAs–InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the -type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain in common emitter operation decreases sharply at laser threshold .
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Research Article| November 16 2004
Laser operation of a heterojunction bipolar light-emitting transistor
N. Holonyak, Jr.;
G. Walter, N. Holonyak, M. Feng, R. Chan; Laser operation of a heterojunction bipolar light-emitting transistor. Appl. Phys. Lett. 15 November 2004; 85 (20): 4768–4770. https://doi.org/10.1063/1.1818331
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