Data are presented demonstrating the laser operation (quasicontinuous, ) of an InGaP–GaAs–InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the -type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain in common emitter operation decreases sharply at laser threshold .
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