Pb0.3Sr0.7TiO3(PST30) thin films were synthesized on platinized silicon (PtSi) and lanthanum aluminate (LAO) substrates using chemical solution deposition technique. The films on LAO substrate were highly (100) oriented, whereas the films on PtSi substrate were polycrystalline. The low dielectric loss in the PST30LAO films makes them attractive for fabricating tunable dielectric devices. An eight-element coupled microstrip phase shifter was fabricated on PST30LAO film and tested in the frequency range 1517GHz. The maximum figure of merit (κ=phase shift per dB loss) of 56°dB was obtained for PST30 film, which was better than commonly observed value in pure barium strontium titanate films. This makes PST30 a potential candidate material for further investigations for microwave applications.

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