We have examined the origins of luminescence in N-ion-implanted epitaxial GaAs, using a combination of cross-sectional transmission electron microscopy and low-energy electron-excited nanoscale-luminescence spectroscopy. A comparison of reference, as-implanted, and implanted-plus-annealed samples reveals a variety of emissions. In all samples, we observe the GaAs fundamental band-gap emission, as well as several emissions related to GaAs native defects. In the as-implanted and implanted-plus-annealed samples, an emission related to the implantation-induced defects, is also observed. Interestingly, in the implanted-plus-annealed samples, we identify a near-infrared emission associated with GaAsN nanocrystallites.

1.
A.
Meldrum
,
R. F.
Haglund
 Jr.
,
L. A.
Boatner
, and
C. W.
White
,
Adv. Mater. (Weinheim, Ger.)
13
,
1431
(
2001
).
2.
X. W.
Lin
,
M.
Behar
,
R.
Maltez
,
W.
Swider
,
Z.
Liliental-Weber
, and
J.
Washburn
,
Appl. Phys. Lett.
67
,
2699
(
1995
).
3.
X.
Weng
,
S. J.
Clarke
,
W.
Ye
,
S.
Kumar
,
R. S.
Goldman
,
A.
Daniel
,
R.
Clarke
,
J.
Holt
,
J.
Sipowska
,
A.
Francis
, and
V.
Rotberg
,
J. Appl. Phys.
92
,
4012
(
2002
).
4.
X.
Weng
,
W.
Ye
,
R. S.
Goldman
, and
J. C.
Mabon
,
J. Vac. Sci. Technol. B
22
,
989
(
2004
).
5.
L. J.
Brillson
,
J. Vac. Sci. Technol. B
19
,
1762
(
2001
).
6.
P.
Hovington
,
D.
Drouin
, and
R.
Gauvin
,
Scanning
19
,
1
(
1997
).
7.
X.
Weng
, Ph.D.
thesis
,
University of Michigan
,
2003
, pp.
239
240
.
8.
D. V.
Lang
,
A. Y.
Cho
,
A. C.
Gossard
,
M.
Ilegems
, and
W.
Wiegmann
,
J. Appl. Phys.
47
,
2558
(
1976
).
9.
P. K.
Bhattacharya
and
S.
Dhar
, in
Semiconductors and Semimetals
, Vol.
26
, edited by
R. K.
Willardson
and
A. C.
Beer
(
Academic
, San Diego,
1988
), p.
143
.
10.
J. F.
Chen
,
J. S.
Wang
,
M. M.
Huang
, and
N. C.
Chen
,
Appl. Phys. Lett.
76
,
2283
(
2000
).
11.
P.
Jayavel
,
K.
Santhakumar
, and
K.
Asokan
,
Nucl. Instrum. Methods Phys. Res. B
212
,
496
(
2003
).
12.
D. V.
Lang
,
Inst. Phys. Conf. Ser.
31
,
70
(
1977
).
13.
M.
Leroux
and
B.
Gil
, in
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
, edited by
J. H.
Edgar
,
S. T.
Strite
,
I.
Akasaki
,
H.
Amano
, and
C.
Wetzel
(
INSPEC
, London, UK,
1999
), p.
45
.
14.
L.
Bellaiche
,
S.-H.
Wei
, and
A.
Zunger
,
Phys. Rev. B
54
,
17568
(
1996
).
You do not currently have access to this content.