We have studied structural and superconducting properties of thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing precursor metalorganic bis(methylcyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the film increases, the resistivity increases, decreases, and the upper critical field increases dramatically as compared to clean films. The self-field in the carbon doped film is lower than that in the clean film, but remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with columnar nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce materials for high magnetic-field applications.
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13 September 2004
Research Article|
September 13 2004
Properties of thin films with carbon doping
A. V. Pogrebnyakov;
A. V. Pogrebnyakov
a)
Department of Physics, Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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X. X. Xi;
X. X. Xi
Department of Physics, Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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J. M. Redwing;
J. M. Redwing
Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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V. Vaithyanathan;
V. Vaithyanathan
Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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D. G. Schlom;
D. G. Schlom
Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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A. Soukiassian;
A. Soukiassian
Department of Materials Science and Engineering and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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S. B. Mi;
S. B. Mi
Institut für Festkörperforschung
, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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C. L. Jia;
C. L. Jia
Institut für Festkörperforschung
, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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J. E. Giencke;
J. E. Giencke
Department of Materials Science and Engineering and Applied Superconductivity Center
, University of Wisconsin, Madison, Wisconsin 53706
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C. B. Eom;
C. B. Eom
Department of Materials Science and Engineering and Applied Superconductivity Center
, University of Wisconsin, Madison, Wisconsin 53706
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J. Chen;
J. Chen
Department of Physics and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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Y. F. Hu;
Y. F. Hu
Department of Physics and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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Y. Cui;
Y. Cui
Department of Physics and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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Qi Li
Qi Li
Department of Physics and Materials Research Institute
, The Pennsylvania State University, University Park, Pennsylvania 16802
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a)
Electronic mail: [email protected]
Appl. Phys. Lett. 85, 2017–2019 (2004)
Article history
Received:
March 29 2004
Accepted:
June 15 2004
Connected Content
A correction has been published:
Erratum: “Properties of thin films with carbon doping” [Appl. Phys. Lett. 85, 2017 (2004)]
Citation
A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, V. Vaithyanathan, D. G. Schlom, A. Soukiassian, S. B. Mi, C. L. Jia, J. E. Giencke, C. B. Eom, J. Chen, Y. F. Hu, Y. Cui, Qi Li; Properties of thin films with carbon doping. Appl. Phys. Lett. 13 September 2004; 85 (11): 2017–2019. https://doi.org/10.1063/1.1782258
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