We present ab initio pseudopotential–density-functional calculations for the electronic structure of the dilute magnetic semiconductor MnxGa1xP, with a realistic x=0.063, in its ordered ferromagnetic phase. We find that it possesses a spin-polarized valence band that could support ideal spin-polarized hole transport. We further find spin-polarized features in the conduction band that could support ideal spin-polarized transport of minority electrons. As such, it emerges as a silicon-lattice-matched candidate material for spintronics applications.

1.
See, e.g.,
S. A.
Wolf
,
D. D.
Awschalom
,
R. A.
Buhrman
,
J . M.
Daughton
,
S.
von Molnár
,
M. L.
Roukes
,
A. Y.
Chtchelkanova
, and
D. M.
Treger
,
Science
294
,
1488
(
2001
), and references therein.
2.
H.
Ohno
,
Science
281
,
951
(
1998
), and references therein.
3.
S. J.
Pearton
,
C. R.
Abernathy
,
M. E.
Overberg
,
G. T.
Thaler
,
D. P.
Norton
,
N.
Theodoropoulou
,
A. F.
Hebard
,
Y. D.
Park
,
F.
Ren
,
J.
Kim
, and
L. A.
Boatner
,
J. Appl. Phys.
93
,
1
(
2003
).
4.
S.
von Molnár
and
D.
Read
,
Proc. IEEE
91
,
715
(
2003
).
5.
T.
Dietl
,
H.
Ohno
,
F.
Matsukura
,
J.
Cibert
, and
D.
Ferrand
,
Science
287
,
1019
(
2000
).
6.
See, e.g.,
T.
Dietl
,
Phys. Status Solidi B
240
,
433
(
2003
), and references therein.
7.
M. E.
Overberg
,
B. P.
Gila
,
C. R.
Abernathy
,
S. J.
Pearton
,
N. A.
Theodoropoulou
,
K. T.
McCarthy
,
S. B.
Arnason
, and
A. F.
Hebard
,
Appl. Phys. Lett.
79
,
3128
(
2001
);
N.
Theodoropoulou
,
A. F.
Hebard
,
M. E.
Overberg
,
C. R.
Abernathy
,
S. J.
Pearton
,
S. N. G.
Chu
, and
R. G.
Wilson
,
Phys. Rev. Lett.
89
,
107203
(
2002
);
[PubMed]
M. E.
Overberg
,
B. P.
Gila
,
G. T.
Thaler
,
C. R.
Abernathy
,
S. J.
Pearton
,
N. A.
Theodoropoulou
,
K. T.
McCarthy
,
S. B.
Arnason
, and
A. F.
Hebard
,
S. N. G.
Chu
,
R. G.
Wilson
,
J. M.
Zavada
, and
Y. D.
Park
,
J. Vac. Sci. Technol. B
20
,
969
(
2002
);
M. E.
Overberg
,
K. H.
Baik
,
G. T.
Thaler
,
C. R.
Abernathy
,
S. J.
Pearton
,
J.
Kelly
,
R.
Rairigh
,
A. F.
Hebard
,
W.
Tang
,
M.
Stavola
, and
J. M.
Zavada
,
Electrochem. Solid-State Lett.
6
,
G131
(
2003
).
8.
We believe that this level of description is accurate enough for the present problem. This is because for MnGaAs and MnGaN, use of more advanced methods, such as LSDA+U, or a self-interaction correction, has changed details of the electronic structure, but not the fundamental picture of ideal spin-polarization. See,
A.
Filippetti
,
N. A.
Spaldin
, and
S.
Sanvito
, cond-mat/0302178;
B.
Sanyal
,
O.
Bengone
, and
S.
Mirbt
,
Phys. Rev. B
68
,
205210
(
2003
);
A. B.
Shick
,
J.
Kudrnovsky
, and
V.
Drchal
,
Phys. Rev. B
69
,
125207
(
2004
).
9.
M.
Jain
,
L.
Kronik
,
J. R.
Chelikowsky
, and
V. V.
Godlevsky
,
Phys. Rev. B
64
,
245205
(
2001
).
10.
L.
Kronik
,
M.
Jain
, and
J. R.
Chelikowsky
,
Phys. Rev. B
66
,
041203
(
2002
).
11.
Semiconductors: Group IV and III-V Compounds, Data in Science and Technology Series
, edited by
O.
Madelung
(
Springer
, Berlin,
1991
).
12.
P.
Mahadevan
and
A.
Zunger
,
Phys. Rev. B
69
,
115211
(
2004
).
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