Effects of $Ti–W$ codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition Available to Purchase

Thin films of thermochromic $VO2$⁠, $V1−xWxO2$ and $V1−x−yWxTiyO2$ (⁠$x=0.014$⁠, and $y=0.12$⁠) were synthesized onto quartz substrates using a reactive pulsed laser deposition technique. The films were then characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The $W$ and $Ti$ dopant effects on the semiconductor-to-metal phase transition of $VO2$ were investigated by measuring the temperature dependence of their electrical resistivity and their infrared transmittance. Remarkably strong effects of $Ti–W$ codoping were observed on both the optical and electrical properties of $V1−x−yWxTiyO2$ films. The IR transmittance was improved, while the transition temperature could be varied from $36°C$ for W-doped $VO2$ film to $60°C$ for $Ti–W$ codoped $VO2$ film. In addition, at room temperature, a higher temperature coefficient of resistance of $5.12%∕°C$ is achieved. Finally, both optical and electrical hysteresis are completely suppressed by $Ti–W$ codoping the $VO2$ films.