Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear -type conductivity with very low thermal activation energy. Mobility values of are found for a sheet carrier concentration of . These measurements indicate that ultrananocrystalline films grown with high nitrogen levels in the growth gas mixture can have bulk carrier concentrations of up to , which is very high for diamond films. The -type nature of this material was also confirmed by Seebeck effect measurements.
-type conductivity in ultrananocrystalline diamond films
Oliver A. Williams, Stephane Curat, Jennifer E. Gerbi, Dieter M. Gruen, Richard B. Jackman; -type conductivity in ultrananocrystalline diamond films. Appl. Phys. Lett. 6 September 2004; 85 (10): 1680–1682. https://doi.org/10.1063/1.1785288
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