The electroluminescence of quantum well light-emitting diodes is analyzed as a function of temperature and injection current. The relative influence of nonradiative carrier recombination, recombination from localized states, and conduction-band to valence-band recombination is discussed. The localized states are found to dominate the emission and the external quantum efficiency only at low temperatures and currents. When temperature and∕or injection level are increased, band-to-band transitions become the main recombination mechanism. Nonradiative recombination is strongly thermally activated, and becomes the dominant process above . As a result of postgrowth rapid thermal annealing, the device luminescence efficiency increases by over one order of magnitude due to a decrease in the density of nonradiative recombination centers.
Dominant carrier recombination mechanisms in quantum well light-emitting diodes
J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, E. Calleja; Dominant carrier recombination mechanisms in quantum well light-emitting diodes. Appl. Phys. Lett. 5 July 2004; 85 (1): 40–42. https://doi.org/10.1063/1.1769078
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