We have used a low-energy positron beam to identify In vacancies in InN layers grown on by molecular beam epitaxy. Their concentration decreases from to below with increasing layer thickness (120–800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers.
Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy
J. Oila, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff; Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy. Appl. Phys. Lett. 1 March 2004; 84 (9): 1486–1488. https://doi.org/10.1063/1.1651327
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