Excellent high-operating-temperature infrared photodiodes in the medium-wavelength infrared spectral band with cutoff wavelengths ∼5 μm at 77 K were fabricated on Hg1−xCdxTe samples (x∼0.30) prepared by liquid-phase epitaxy in a tellurium-melt reactor. The samples were doped with indium to ∼1×1014cm−3 and gold to ∼5×1015cm−3. Thick planar diodes (∼80 μm thick) and thin cylindrical diodes (∼10 μm thick) of the n-on-p type were fabricated, and they gave comparable, excellent detector dark values within a factor of two. At 130 K, dark currents as low as 5×10−7A/cm2 were obtained.

1.
J. L. Miller, Principles of Infrared Technology (Van Nostrand Reinhold, New York, 1994).
2.
M. A.
Kinch
,
Proc. SPIE
4369
,
566
(
2001
).
3.
S.
Holander-Gleixner
,
B. L.
Williams
,
H. G.
Robinson
, and
C. R.
Helms
,
J. Electron. Mater.
26
,
629
(
1997
), and references therein.
4.
H. D.
Shih
,
M. A.
Kinch
,
F.
Aqariden
,
P. K.
Liao
, and
H. F.
Schaake
,
Appl. Phys. Lett.
82
,
4157
(
2003
).
5.
M. A.
Kinch
,
J. Electron. Mater.
29
,
809
(
2000
).
6.
L.
Colombo
and
G. H.
Westphal
,
Proc. SPIE
2228
,
62
(
1994
).
7.
F.
Aqariden
,
H. D.
Shih
,
M. A.
Kinch
, and
H. F.
Schaake
,
Appl. Phys. Lett.
78
,
3481
(
2001
).
This content is only available via PDF.
You do not currently have access to this content.