High-contrast organic light-emitting diodes (OLEDs) with low-reflection cathode structures were constructed. The cathode structure consisted of a semitransparent cathode layer, a transparent phase-changing layer, and a highly reflective metal overlayer. When samarium (Sm), tris (8-quinolinolato) aluminum and Al were used as the cathode layer, phase-changing layer, and reflective layer, respectively, luminous reflectance of the resulting OLED was reduced from 81% to 2.7% as compared to a conventional OLED with a LiF/Al cathode. A further reduction to 0.9% was realized by replacing a multilayer of for the single phase-change layer of In such a structure, the spectral reflectance was below 0.03 in the entire visible region and showed a weak dependence on incident angles of light. A contrast ratio of 250:1 can be achieved at a brightness of 100 cd/m2 under 140 lx of ambient-lighting. Device efficiencies of the high-contrast OLEDs were reduced, while their electrical characteristics were almost identical to that of the control device.
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16 February 2004
Research Article|
February 16 2004
High-contrast organic light-emitting diodes Available to Purchase
Z. Y. Xie;
Z. Y. Xie
Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China
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L. S. Hung
L. S. Hung
Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China
Search for other works by this author on:
Z. Y. Xie
Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China
L. S. Hung
Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China
Appl. Phys. Lett. 84, 1207–1209 (2004)
Article history
Received:
July 14 2003
Accepted:
December 18 2003
Citation
Z. Y. Xie, L. S. Hung; High-contrast organic light-emitting diodes. Appl. Phys. Lett. 16 February 2004; 84 (7): 1207–1209. https://doi.org/10.1063/1.1647689
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