We present an electroreflectance investigation on the polarization field in InGaN/AlInGaN quantum wells (QWs) grown on GaN, in which the AlInGaN barrier is lattice-matched to the GaN substrate. Due to the quantum-confined Stark effect on the QWs, the bias-dependent spectra reveal a paraboliclike energy shift, an intensity minimum, and an 180° phase change at the flat-band voltage. By using this technique, the polarization field can be measured precisely. We found that the polarization field in the InGaN/AlInGaN QW is reduced significantly as compared with that in the InGaN/GaN system. The reduced polarization field is attributed to the contribution of spontaneous polarization in the quaternary barrier, which tends to compensate the piezoelectric polarization in the InGaN QWs.
Skip Nav Destination
Article navigation
16 February 2004
Research Article|
February 10 2004
Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
T. M. Hsu;
T. M. Hsu
Department of Physics, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
C. Y. Lai;
C. Y. Lai
Department of Physics, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
W.-H. Chang;
W.-H. Chang
Department of Physics, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
C.-C. Pan;
C.-C. Pan
Department of Electrical Engineering, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
C.-C. Chuo;
C.-C. Chuo
Department of Electrical Engineering, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
J.-I. Chyi
J.-I. Chyi
Department of Electrical Engineering, National Central University, Chung-Li, 32054 Taiwan, Republic of China
Search for other works by this author on:
Appl. Phys. Lett. 84, 1114–1116 (2004)
Article history
Received:
July 28 2003
Accepted:
December 08 2003
Citation
T. M. Hsu, C. Y. Lai, W.-H. Chang, C.-C. Pan, C.-C. Chuo, J.-I. Chyi; Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells. Appl. Phys. Lett. 16 February 2004; 84 (7): 1114–1116. https://doi.org/10.1063/1.1645994
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
Appl. Phys. Lett. (May 2002)
Luminescence mechanisms in quaternary Al x In y Ga 1−x−y N materials
Appl. Phys. Lett. (May 2002)
Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures
Appl. Phys. Lett. (January 2004)
Optical bandgap formation in AlInGaN alloys
Appl. Phys. Lett. (October 2000)
Growth and characterization of AlInGaN quaternary alloys
Appl. Phys. Lett. (January 1996)