Single-phase SixSnyGe1−x−y alloys (x⩽0.25,y⩽0.11) were grown on Si using chemical vapor deposition. First principles simulations predict that these materials are thermodynamically accessible and yield lattice constants as a function of Si/Sn concentrations in good agreement with experiment. An empirical model derived from experimental SixGe1−x and SnyGe1−y binary data also provides a quantitative description of the composition dependence of the lattice parameters. Spectroscopic ellipsometry of selected samples yields dielectric functions indicating a band structure consistent with highly crystalline semiconductor materials of diamond symmetry. Incorporation of Si into SnyGe1−y leads to an additional reduction of the E2 critical point, as expected based on the E2 values of Si and Ge.

1.
G. A. Antypas, in GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley, Chichester, 1982), p. 3.;
A. R. Kost, Infrared-Applications-of-Semiconductors-II (Materials Research Society, Pittsburgh, PA, 1998), p. 3.;
A. W.
Bett
,
F.
Dimroth
,
G.
Stollwerck
, and
O. V.
Sulima
,
Appl. Phys. A: Mater. Sci. Process.
A69
,
119
(
1999
);
R.
Gaska
,
A.
Zukauskas
,
M. S.
Shur
, and
M. A.
Khan
,
Proc. SPIE
4776
,
82
(
2002
).
2.
R. A.
Soref
and
C. H.
Perry
,
J. Appl. Phys.
69
,
539
(
1991
).
3.
K. A.
Johnson
and
N. W.
Ashcroft
,
Phys. Rev. B
54
,
14
480
(
1996
).
4.
M.
Bauer
,
C.
Ritter
,
P. A.
Crozier
,
J.
Ren
,
J.
Menendez
,
G.
Wolf
, and
J.
Kouvetakis
,
Appl. Phys. Lett.
83
,
2163
(
2003
).
5.
C. S. Cook, S. Zollner, M. R. Bauer, P. Aella, J. Kouvetakis, and J. Menendez, Thin Solid Films (to be published).
6.
P. Y. Yu and M. Cardona, in Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1996), p. 258.
7.
S. Zollner, in Silicon-Germanium Carbon Alloys: Growth, Properties, and Applications (Taylor & Francis, New York, 2002), p. 387.
8.
G.
Kresse
and
J.
Hafner
,
Phys. Rev. B
47
,
R558
(
1993
);
G.
Kresse
and
J.
Hafner
,
Phys. Rev. B
49
,
14251
(
1994
);
G.
Kresse
and
J.
Furthmuller
,
Comput. Mater. Sci.
6
,
15
(
1996
);
G.
Kresse
and
J.
Furthmuller
,
Phys. Rev. B
54
,
11
169
(
1996
).
9.
J. P.
Dismukes
,
L.
Ekstrom
,
E. F.
Steigmeier
,
I.
Kudman
, and
D. S.
Beers
,
J. Appl. Phys.
35
,
2899
(
1964
).
10.
A. V. G.
Chizmeshya
,
M. R.
Bauer
, and
J.
Kouvetakis
,
Chem. Mater.
15
,
2511
(
2003
).
This content is only available via PDF.
You do not currently have access to this content.