Electron field emission from $SiC∕Si$ heterostructures by high temperature carbon implantation into silicon

A high-intensity electron field emission was obtained from a $SiC∕Si$ heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the $SiC∕Si$ heterostructure by post-implantation etching off the top $Si$⁠. A low turn-on field of $2.6V∕μm$ was observed with samples formed by $160keV$ carbon implantation with a dose of $8.0×1017cm−2$⁠. The existence of the densely distributed small protrusions was considered as the main reason for efficient emission.