We have fabricated thermoelectric devices using InN and Al0.25In0.75N prepared by radio-frequency sputtering. The devices are composed of (a) Al0.25In0.75N–chromel of 20 pairs on SiO2 glass, (b) InN–chromel of 20 pairs on SiO2 glass, and (c) InN-chromel of 20 pairs on polyimide film. The maximum output power and the open output voltage were (a) 1.6×106W and 0.21V at the temperature difference ΔT=345K, 263×1012W and 2.7×103V at ΔT=4.8K, (b) 3.9×106W and 0.22V at ΔT=332K, 282×1012W and 2.4×103V at ΔT=4.1K, and (c) 0.33×106W and 0.089V at ΔT=280K, 63×1012W and 1.4×103V at ΔT=4.5K, respectively.

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