We report radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistors (HBLET) operating in the common-emitter configuration. The typical current gain, β, for a emitter area of the HBLET is 38. The optical emission wavelength from a 30 nm base is centered at Three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation is demonstrated at 10 kHz.
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Research Article| May 21 2004
Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor
N. Holonyak, Jr.;
M. Feng, N. Holonyak, B. Chu-Kung, G. Walter, R. Chan; Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor. Appl. Phys. Lett. 7 June 2004; 84 (23): 4792–4794. https://doi.org/10.1063/1.1760595
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