The effect of C co-doping on the luminescence from Tb-doped silicon-rich silicon oxide (SRSO) films is investigated. Tb-doped SRSO films co-doped with C (SRSO:C) were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The photoluminescence intensity is enhanced by the presence of nanocluster Si (nc-Si), and C co-doping further increases the photoluminescence intensity by more than an order of magnitude. The maximum enhancement is observed at the C content of ∼5 at. %, at which the luminescence is bright enough to be observed by the naked eye under ambient conditions. The 543 nm lifetimes were in the range of 0.5–1.2 ms, comparable to those from Tb-doped silica. Based on the results, we conclude that nanometer-sized nc-Si can excite ions via an Auger-type energy transfer, and that C co-doping greatly increases the efficiency of such exciton-mediated excitation of
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31 May 2004
Research Article|
May 31 2004
Enhancement of the green, visible luminescence from Tb-doped silicon-rich silicon oxide by C co-doping
Se-Young Seo;
Se-Young Seo
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, Korea
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Jung H. Shin
Jung H. Shin
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, Korea
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Appl. Phys. Lett. 84, 4379–4381 (2004)
Article history
Received:
October 27 2003
Accepted:
April 12 2004
Citation
Se-Young Seo, Jung H. Shin; Enhancement of the green, visible luminescence from Tb-doped silicon-rich silicon oxide by C co-doping. Appl. Phys. Lett. 31 May 2004; 84 (22): 4379–4381. https://doi.org/10.1063/1.1757015
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