Formation of CdSe quantum dots on homoepitaxial ZnSe

CdSe quantum dots were prepared by molecular beam epitaxy on homoepitaxially grown ZnSe (001) via thermally activated reorganization of an initially two-dimensional film. In spite of the difficulties related to the ZnSe substrate treatment prior to the epitaxial growth, atomically smooth sample surfaces could be achieved with increasing growth time and layer-by-layer growth was realized. The photoluminescence quantum yield of the quantum dots grown on homoepitaxial ZnSe is only slightly reduced in comparison to the standard epitaxy using GaAs as substrate. Distinct single-dot features were identified using a micro-optical setup.