We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the -based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.
REFERENCES
1.
M. Shur, Physics of Semiconductor Devices (Prentice–Hall, Englewood Cliffs, NJ, 1990).
2.
S.
Takagi
, A.
Toriumi
, M.
Iwase
, and H.
Tango
, IEEE Trans. Electron Devices
41
, 2357
(1994
).3.
4.
5.
J. A.
Rogers
, Z.
Bao
, K.
Baldwin
, A.
Dodabalapur
, B.
Crone
, V. R.
Raju
, V.
Kuck
, H.
Katz
, K.
Amundson
, J.
Ewing
, and P.
Drzaic
, Proc. Natl. Acad. Sci. U.S.A.
98
, 4835
(2001
).6.
B. A.
Ridley
, B.
Nivi
, and J. M.
Jacobson
, Science
286
, 746
(1999
).7.
C. R.
Kagan
, D. B.
Mitzi
, and C. D.
Dimitracopoulos
, Science
286
, 945
(1999
).8.
X.
Duan
, C.
Niu
, V.
Sahi
, J.
Chen
, J.
Wallace Parce
, S.
Empedocles
, and J. L.
Goldman
, Nature (London)
425
, 274
(2003
).9.
V.
Podzorov
, V. M.
Pudalov
, and M. E.
Gershenson
, Appl. Phys. Lett.
82
, 1739
(2003
).10.
Preparation and Crystal Growth of Materials with Layered Structures, edited by R. M. A. Lieth (Reidel, Dordrecht, 1977).
11.
E. Bucher, in Photoelectrochemistry and Photovoltaics of Layered Semiconductors, edited by A. Aruchamy, (Kluwer Academic, Dordrecht, 1992), pp. 1–81.
12.
13.
R.
Späh
, U.
Elrod
, M.
Lux-Steiner
, E.
Bucher
, and S.
Wagner
, Appl. Phys. Lett.
43
, 79
(1983
).14.
R.
Späh
, M.
Lux-Steiner
, M.
Obergfell
, E.
Bucher
, and S.
Wagner
, Appl. Phys. Lett.
47
, 871
(1985
).15.
V.
Podzorov
, S.
Sysoev
, E.
Loginova
, V. M.
Pudalov
, and M. E.
Gershenson
, Appl. Phys. Lett.
83
, 3504
(2003
).16.
17.
R.
Martel
, V.
Derycke
, C.
Lavoie
, J.
Appenzeller
, K. K.
Chan
, J.
Tersoff
, and Ph.
Avouris
, Phys. Rev. Lett.
87
, 256805
(2001
).18.
J. A.
Misewich
, R.
Martel
, Ph.
Avouris
, J. C.
Tsang
, S.
Heinze
, and J.
Tersoff
, Science
300
, 783
(2003
).19.
E. D.
Minot
, Y.
Yaish
, V.
Sazonova
, J.-Y.
Park
, M.
Brink
, and P. L.
McEuen
, available at .http://arXiv.org/abs/cond-mat/0211152.20.
R. J.
Chesterfield
, C. R.
Newman
, T. M.
Pappenfus
, P. C.
Ewbank
, M. H.
Haukaas
, K. R.
Mann
, L. L.
Miller
, and C.
Daniel Frisbie
, Adv. Mater. (Weinheim, Ger.)
15
, 1278
(2003
).21.
A.
Dodabalapur
, H. E.
Katz
, L.
Torsi
, and R. C.
Haddon
, Appl. Phys. Lett.
68
, 1108
(1996
).22.
J.
Kanicki
, F. R.
Libsch
, J.
Griffith
, and R.
Polastre
, J. Appl. Phys.
69
, 2339
(1991
).
This content is only available via PDF.
© 2004 American Institute of Physics.
2004
American Institute of Physics
You do not currently have access to this content.
