We report on the low-temperature mobility in remotely doped -type strained Ge layers on relaxed virtual substrates, grown by low-energy plasma-enhanced chemical vapor deposition. A maximum mobility of has been reached at 2 K, at a carrier sheet density of Analysis of the mobility and Dingle ratio as a function of sheet density suggests that remote impurity scattering is the limiting factor at low sheet densities, but that interface impurities become more important as the sheet density increases.
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