Subpicosecond time-resolved differential transmission spectroscopy has been used to investigate the carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well structures. It is found that the capture time varies significantly with both temperature and carrier density, the latter effect being consistent with carrier-induced band bending or increased carrier–carrier scattering. At room temperature, the electron capture time is in the range 0.4–0.8 ps for carrier densities
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