This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In1−xGaxAs(x=85%) quantum wells (QWs) acting, in effect, as electron capture centers (“traps”) are imbedded in the 300 Å GaAs base layer, thus improving (as a “collector” and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated.

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