We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 μm laser emission. The calculations are based on a model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We consider two main Auger recombination channels: the process when the energy released from the electron-hole recombination causes electron excitation (CHCC process) and the process with hole excitation to the split-off valence band (CHHS process). The CHHS process is shown to be dominant. Good agreement is found when comparing the calculated Auger rates with experimental values of the Auger contribution to the threshold current of GaInNAs quantum well lasers.
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15 March 2004
Research Article|
March 15 2004
Theoretical study of Auger recombination in a GaInNAs quantum well laser structure
A. D. Andreev;
A. D. Andreev
Department of Physics, University of Surrey, Guildford GU2 7XH, United Kingdom
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E. P. O’Reilly
E. P. O’Reilly
NMRC, University College, Lee Maltings, Prospect Row, Cork, Ireland
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Appl. Phys. Lett. 84, 1826–1828 (2004)
Article history
Received:
August 18 2003
Accepted:
January 07 2004
Citation
A. D. Andreev, E. P. O’Reilly; Theoretical study of Auger recombination in a GaInNAs quantum well laser structure. Appl. Phys. Lett. 15 March 2004; 84 (11): 1826–1828. https://doi.org/10.1063/1.1664033
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