Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process.
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