Organic thin-film transistors (OTFTs) having source/drain electrodes sandwiched between copper phthalocyanine (CuPc) and cobalt phthalocyanine (CoPc) layers, CuPc/CoPc SC OTFTs, are investigated. Comparing their properties with that of CuPc-based top-contact OTFT, field-effect mobility increases from 0.04 to threshold voltage shifts from −13.8 to −8.9 V, and the current on/off ratio maintains at a level of A top-contact OTFT with a layer of CuPc and a layer of CoPc (10%)–CuPc mixture reveals that the combination of CuPc and CoPc enhances charge injection from the source electrode into the active layer and increases the off-state current. The sandwich configuration increases the field-effect mobility, reduce the threshold voltage, and improve the on/off ratio at the same time. Our results indicate that using a double-layer of active organic materials in sandwich configuration is an effective way to improve OTFT performance.
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5 January 2004
Research Article|
January 05 2004
Organic thin-film transistors in sandwich configuration
Jian Zhang;
Jian Zhang
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People’s Republic of China
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Jun Wang;
Jun Wang
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People’s Republic of China
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Haibo Wang;
Haibo Wang
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People’s Republic of China
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Donghang Yan
Donghang Yan
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People’s Republic of China
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Appl. Phys. Lett. 84, 142–144 (2004)
Article history
Received:
August 06 2003
Accepted:
November 12 2003
Citation
Jian Zhang, Jun Wang, Haibo Wang, Donghang Yan; Organic thin-film transistors in sandwich configuration. Appl. Phys. Lett. 5 January 2004; 84 (1): 142–144. https://doi.org/10.1063/1.1638634
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