By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography.
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, W. Seifert; Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device. Appl. Phys. Lett. 1 September 2003; 83 (9): 1881–1883. https://doi.org/10.1063/1.1606881
Download citation file: