We have investigated the redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 with secondary ion mass spectrometry. Boron concentration was observed to be increased at the TiSi2/Si interface after deposition of PECVD TiSi2. Contact resistance with PECVD TiSi2 was measured to be constant in the range of −30–125 °C, implying that the accumulated boron was electrically active and charge transport was field emission in nature.

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