Epitaxial growth and ferroelectric properties of $SrBi2Nb2O9(115)$ thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

Epitaxial $SrBi2Nb2O9$ thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the $SrBi2Nb2O9(115)/Pt(111)$ bilayers. The influence of the Pt bottom electrode on the growth of $SrBi2Nb2O9$ films is discussed in terms of atomic matching at the $SrBi2Nb2O9/Pt$ interface. The remanent polarization is close to $6 μC/cm2,$ with a coercive field of $140 kV/cm.$ The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after $2.109$ switching cycles, confirming the fatigue resistance of the film.