Silicon oxynitrides provide dielectric materials with improved properties for further enhanced metal–oxide–semiconductor field effect transistors. Spatially resolved quantitative analysis of the elemental composition across the gate dielectric is required to optimize this ultrathin layer. So far, this has not been possible for cross-sectioned transistors. We have obtained spatially resolved atomic ratios of N, O and Si from such samples. Electron energy-loss spectra were recorded in a scanning transmission electron microscope and processed quantitatively by fitting a set of reference spectra to them. Deposition parameters and electrical transistor properties can thus be correlated with the N and O depth distributions in the oxynitride gate dielectric of processed transistors.
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15 December 2003
Research Article|
December 15 2003
Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy
Heiko Stegmann;
Heiko Stegmann
AMD Saxony LLC & Company KG, P.O. Box 110110, 01330 Dresden, Germany
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Ehrenfried Zschech
Ehrenfried Zschech
AMD Saxony LLC & Company KG, P.O. Box 110110, 01330 Dresden, Germany
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Appl. Phys. Lett. 83, 5017–5019 (2003)
Article history
Received:
August 13 2003
Accepted:
October 22 2003
Citation
Heiko Stegmann, Ehrenfried Zschech; Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy. Appl. Phys. Lett. 15 December 2003; 83 (24): 5017–5019. https://doi.org/10.1063/1.1633674
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