High-density ZnO nanowires (ZnONWs) were aligned onto Au-catalyzed Si substrate through a simple low-temperature physical vapor deposition method. Scanning electron microscope (SEM) observations, x-ray diffraction (XRD) analysis, and photoluminescence spectra showed that the ZnONWs were single-crystalline, with a hexagonal wurzite structure. All of the results inferred from the SEM observations, the XRD rocking curves, and the Raman spectra for the investigated samples confirm that the ZnONWs are well aligned and c-axis oriented. The Raman spectra also indicated that the ZnONWs on Si substrates are under the biaxial compressive stress. Since it takes the advantage of low-cost, easily controlled deposition spot (due to the selective deposition trait of the Au layer), potential for scale-up production, and ability to integrate with Si substrate, this technique has a potential in future for fabricating the ZnONW array-based optoelectronic devices.
Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate
Ye Zhang, Hongbo Jia, Rongming Wang, Chinping Chen, Xuhui Luo, Dapeng Yu, Cheoljin Lee; Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. Appl. Phys. Lett. 1 December 2003; 83 (22): 4631–4633. https://doi.org/10.1063/1.1630849
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