A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots for application in single-electron devices or optical devices. The formation of Ge quantum dots is realized by the Ge atoms’ segregation and agglomeration during thermal oxidation of alloys. The size and distribution of the Ge dots are determined by conditions of thermal oxidation process and Ge content in the alloys. An average Ge-dot size of 5.1 nm with standard deviation of 1.79 nm and a comparatively uniform spatial distribution (dot density of could be obtained by selective oxidation of -on-insulator structure.
Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator
P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, S. C. Lu, M.-J. Tsai; Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator. Appl. Phys. Lett. 1 December 2003; 83 (22): 4628–4630. https://doi.org/10.1063/1.1631395
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