We report on the fabrication and characterization of single-crystal organic -type field-effect transistors (OFETs) with the field-effect mobility substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. The subthreshold slope as small as V/decade has been observed for a gate insulator capacitance This corresponds to the intrinsic subthreshold slope at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices.
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Since the studied devices are -type FETs, we reserve the term “source” for an electrode that is biased positively and injects holes, while the grounded electrode is called the “drain.”
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The four-probe mobility is defined as where and are the distance and the voltage drop between the voltage probes, respectively. is measured by an electrometer with an input resistance Ω. The contact resistance has been determined as
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