The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (Bs–Bi) diffusion can become as important as boron-interstitial pair (Bs–Sii) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer et al. [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature (≈1200 °C) postimplantion annealing of ultralow-energy (≈500 eV) implanted high-concentration (>1019 cm−3) boron in silicon.

1.
B.
Sadigh
,
T. J.
Lenosky
,
S. K.
Theiss
,
M.-J.
Caturla
,
T.
Diaz de Rubia
, and
M. A.
Foad
,
Phys. Rev. Lett.
83
,
4341
(
1999
).
Google Scholar
Crossref
Search ADS
 
2.
W.
Windl
,
M. M.
Bunea
,
R.
Stumpf
,
S. T.
Dunham
, and
M. P.
Masquelier
,
Phys. Rev. Lett.
83
,
4345
(
1999
).
Google Scholar
Crossref
Search ADS
 
3.
E.
Schroer
,
V.
Privitera
,
F.
Priolo
,
E.
Napolitani
, and
A.
Carnera
,
Appl. Phys. Lett.
74
,
3996
(
1999
).
Google Scholar
Crossref
Search ADS
 
4.
A. F. W.
Willoughby
,
A. G. R.
Evans
,
P.
Champ
,
K. J.
Yallup
,
D. J.
Godfrey
, and
M. G.
Dowsett
,
J. Appl. Phys.
59
,
2392
(
1986
).
Google Scholar
Crossref
Search ADS
 
5.
G. S.
Hwang
and
W. A.
Goddard
III,
Phys. Rev. Lett.
89
,
055901
(
2002
).
Google Scholar
Crossref
Search ADS
PubMed
 
6.
J.
 
Zhu
,
T.
 
Diaz de Rubia
,
L. H.
 
Yang
, and
C.
 
Maihiot
,
Phys. Rev. B
 
54
,
4741
(
1996
);
Google Scholar
Crossref
Search ADS
 
J.
Zhu
,
Comput. Mater. Sci.
12
,
309
(
1998
).
Google Scholar
Crossref
Search ADS
 
7.
X.-Y.
Liu
,
W.
Windl
, and
M. P.
Masquelier
,
Appl. Phys. Lett.
77
,
2018
(
2000
).
Google Scholar
Crossref
Search ADS
 
8.
The projected diffusion length is given by λ=6De/Ddiss where De and Ddiss are the diffusivity of a departing species and the dissociation rate, respectively. Since a species must diffuse one jump away from the cluster to be dissociated, we approximate the dissociation rate for Bs–Bi, as Ddiss∝De(Bs–Sii)×exp[−Eb(Bs–Bi)]/kBT]. Hence, λ(Bs–Bi)/λ(Bs–Sii)≈{[De(Bs–Bi)De(Sii)/De(Bs–Sii)2]/exp[(Eb(Bs–Bi)−Eb(Bs–Sii))/kBT]}1/2≈56.46.
9.
D. J.
Eaglesham
,
P. A.
Stolk
,
H.-J.
Gossmann
, and
J. M.
Poate
,
Appl. Phys. Lett.
65
,
2305
(
1994
).
Google Scholar
Crossref
Search ADS
 
10.
P. M.
 
Fahey
,
P. B.
 
Griffin
, and
J. D.
 
Plummer
,
Rev. Mod. Phys.
 
61
,
289
(
1989
);
Google Scholar
Crossref
Search ADS
 
W.
Shockley
and
J. T.
Last
,
Phys. Rev.
107
,
392
(
1957
).
Google Scholar
Crossref
Search ADS
 
11.
The population of interstitials with +x charge state is given by Wx=Wi,x(p/ni)x, where p and n are the extrinsic and intrinsic carrier concentration, respectively. Here the subscript i indicates the value obtained under intrinsic conditions.
12.
W.
Shockley
and
J. T.
Last
,
Phys. Rev.
107
,
392
(
1957
).
Google Scholar
Crossref
Search ADS
 
13.
G. D.
Watkins
,
Mater. Sci. Semicond. Process.
3
,
227
(
2000
).
Google Scholar
Crossref
Search ADS
 
14.
L.
Pelaz
,
M.
Jaraiz
,
G. H.
Gilmer
,
H.-J.
Gossmann
,
C. S.
Rafferty
,
D. J.
Eaglesham
, and
J. M.
Poate
,
Appl. Phys. Lett.
70
,
2285
(
1997
).
Google Scholar
Crossref
Search ADS
 
15.
K.
Kyllesbech Larsen
,
P.
Stolk
,
V.
Privitera
,
J. G. M.
van Berkum
,
W. B.
de Boer
,
G.
Mannino
,
N. E. B.
Cowern
, and
H. G. A.
Huizing
,
Mater. Res. Soc. Symp. Proc.
469
,
291
(
1997
).
Google Scholar
Crossref
Search ADS
 
16.
M.
Laudon
,
N. N.
Carlson
,
M. P.
Masquelier
,
M. S.
Daw
, and
W.
Windl
,
Appl. Phys. Lett.
78
,
201
(
2001
); references cited therein.
Google Scholar
Crossref
Search ADS
 
17.
H.
Park
,
K. S.
Jones
,
J. A.
Slinkman
, and
M. E.
Law
,
J. Appl. Phys.
78
,
3664
(
1995
).
Google Scholar
Crossref
Search ADS
 
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