We have performed high-resolution near-field laser spectroscopy and microscopy of single InAs/GaAs quantum dots near liquid nitrogen temperature. By simultaneous use of 100-nm shadow mask apertures and a 30-nm-aperture fiber probe, we have achieved photoluminescence (PL) resolution comparable to that available at liquid helium temperature. In particular, we have obtained a PL linewidth of 0.6 meV for single exciton states, and observed biexciton states with quadratic power dependence.
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