We discuss an implementation of ballistic electron emission microscopy (BEEM), in which the metallic or metal–insulator “stack” of interest is formed directly over an avalanche diode. This allows nanometer-resolution studies of hot-electron transport through technologically important device stacks with up to single electron sensitivity and measurement bandwidth when the avalanche diode is cooled to
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http://optoelectronics.perkinelmer.com/Downloads/c30902e.pdf
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© 2003 American Institute of Physics.
2003
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