Pentacene thin-film transistors with $Al2O3+x$ gate dielectric films deposited on indium-tin-oxide glass Available to Purchase

We report on the fabrication of pentacene thin-film transistors (TFTs) with $Al2O3+x$ films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the $Al2O3+x$ was expected to show lower capacitance and breakdown field than stoichiometric $Al2O3,$ our pentacene TFTs with optimized thin $Al2O3+x$ gate dielectric exhibited a moderately high field mobility of 0.14 $cm2/V s,$ an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over $106.$ Our work demonstrates that RT-deposited $Al2O3+x$ is a promising gate dielectric material for organic TFTs.