We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy on InP substrates. (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 °C. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction pattern and transmission electron microscopy show no MnAs clustering, indicating that a homogeneous single crystal was grown. Magnetic circular dicroism characterizations, as well as transport and magnetization measurements, indicate that the Curie temperature is 125–130 K.

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