We report the fabrication of stable wide-band-gap (∼6 eV) ZnO/MgO multilayer thin films using pulsed-laser deposition on -plane substrates. The thickness of ZnO layers was varied in the range of 0.75–2.5 nm inside the MgO host with a constant MgO thickness of 1 nm. With a decrease in the thickness of ZnO sublayers, abrupt structural transition from hexagonal to cubic phase was observed. The band gap of the films was found to be influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure exhibited band-gap values of 3.5 and 6 eV, respectively. The x-ray photoelectron spectroscopy analysis confirmed that the Mg content of the films was about 40% and 60% in the hexagonal and cubic phases, respectively. Annealing at 750 °C did not influence the structural and optical properties of the ZnO/MgO multilayers.
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8 September 2003
Research Article|
September 08 2003
Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films
P. Bhattacharya;
P. Bhattacharya
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
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Rasmi R. Das;
Rasmi R. Das
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
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R. S. Katiyar
R. S. Katiyar
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
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Appl. Phys. Lett. 83, 2010–2012 (2003)
Article history
Received:
December 03 2002
Accepted:
July 11 2003
Citation
P. Bhattacharya, Rasmi R. Das, R. S. Katiyar; Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films. Appl. Phys. Lett. 8 September 2003; 83 (10): 2010–2012. https://doi.org/10.1063/1.1609250
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