Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Available to Purchase

Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were evaluated using double-crystal x-ray rocking curves and scanning and transmission electron microscopy. The microstructure of the InAs grown on mask-free control samples was comprised of micron-scale misoriented grains and dislocations at a density of $1011 cm−2.$ As the width of the mask openings decreased to 0.8 μm, the rocking curves narrowed, grain boundaries disappeared and the dislocation density decreased to $<107 cm−2.$ The distribution of the remaining defects suggests substantial changes in microstructural development when the window width is $≲1 μm.$