Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on -plane sapphire substrates. Additional modes at about 277, 511, 583, and recently assigned to N incorporation [A. Kaschner et al., Appl. Phys. Lett. 80, 1909 (2002)], were observed for Fe, Sb, and Al doped films, intentionally grown without N. The mode at occurs also for Ga doped films. These modes thus cannot be related directly to N incorporation. Instead, we suggest host lattice defects as their origin. Further additional modes at 531, 631, and seem specific for the Sb, Ga, and Fe dopants, respectively. Li doped ZnO did not reveal additional modes.
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