Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on substrates. Trimethylgallium (TMGa), ammonia and europium 2,2,4,4-tetramethyl-3,5-heptanedionate were used as sources for Ga, N, and Eu dopant, respectively. The influence of the V/III ratio during growth on the photoluminescence (PL) intensity has been studied using a fixed TMGa flow rate of 92 μmol/min and varying the flow rate. The film growth rate (∼2 μm/h) is nearly constant with V/III ratio over the range from ∼30 to ∼1000. The Eu incorporation in GaN films was found to decrease with increasing V/III ratio. The Eu PL intensity (normalized to the Eu concentration) exhibited a maximum at a V/III ratio of ∼100.
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7 July 2003
Research Article|
July 07 2003
Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
M. Pan;
M. Pan
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
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A. J. Steckl
A. J. Steckl
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
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M. Pan
A. J. Steckl
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
Appl. Phys. Lett. 83, 9–11 (2003)
Article history
Received:
February 10 2003
Accepted:
May 08 2003
Citation
M. Pan, A. J. Steckl; Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 7 July 2003; 83 (1): 9–11. https://doi.org/10.1063/1.1590738
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