Studies of field-induced nonequilibrium electron transport in an $InxGa1−xN$ $(x≅0.6)$ epilayer grown on GaN Available to Purchase

Field-induced electron transport in an $InxGa1−xN$ $(x≅0.6)$ sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Nonequilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the $InxGa1−xN$ layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.