We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using ammonia. The structural properties are assessed by reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and x-ray diffraction. Refractive index values are deduced from room-temperature spectroscopic ellipsometry. Optical data analysis is performed using the Kramers-Krönig relation in the transparent spectral region, from 1.6 to 3.2 eV. Evidence is presented showing the influence of strain and dislocation density on the AlN layer refractive index.
Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Dogheche, E. Dumont; Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Appl. Phys. Lett. 3 March 2003; 82 (9): 1386–1388. https://doi.org/10.1063/1.1558217
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