Degenerate $p$-type conductivity in wide-gap $LaCuOS1−xSex$ $(x=0–1)$ epitaxial films Available to Purchase

Epitaxial films of $LaCuOS1−xSex$ $(x=0–1)$ solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of $∼50 meV$ is observed for all $x$ values. Hall mobility becomes large with an increase in the Se content and it reaches $8.0 cm2V−1s−1$ in LaCuOSe, a comparable value to that of $p$-type GaN:Mg. Doping of $Mg2+$ ions at $La3+$ sites enhances a hole concentration up to $2.2×1020 cm−3,$ while maintaining the Hall mobility as large as $4.0 cm2V−1s−1.$ Consequently, a degenerate $p$-type electrical conduction with a conductivity of $140 S cm−1$ was achieved.