GaN/AlN quantum-dot superlattices grown by molecular-beam epitaxy on silicon (111) or sapphire (0001) substrate have been investigated using high-resolution transmission electron microscopy, photoluminescence, and photo-induced absorption spectroscopy. Under interband excitation at three resonances are observed, respectively peaked at 2.1 μm (2.36 μm), 1.46 μm (1.69 μm), and 1.28 μm (1.27 μm) for the sample grown on silicon (sapphire) substrate. We show that the absorptions involve conduction-band interlevel transitions from the ground state to p-like or d-like states, and that their energy is governed mainly by the magnitude of the internal field in the GaN dots.
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm
Kh. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, J. Massies; Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm. Appl. Phys. Lett. 10 February 2003; 82 (6): 868–870. https://doi.org/10.1063/1.1543238
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